Similarity and difference of the impact of ion implantation and thermal oxidation on the lattice structure of 4H-SiC (0001) surface

摘要

We investigated the similarities and differences of the impacts of ion implantation and thermal oxidation on the lattice structure of 4H-SiC (0001) surface. Our results showed that both Ar-/O-ion implantations and thermal oxidation induce significant distortion at the 4H-SiC surface. The oxygen-implanted sample resulted in a significant increase of distortion after short-time annealing, indicating the distortion is enhanced by the existence of oxygen. A clear difference of the kinetics of lattice relaxations between Ar-implanted and thermally oxidized 4H-SiC indicates that the distortion introduction mechanism by invading oxygen into the SiC surface is different from the one by Frenkel pairs formation by ion implantations. (C) 2019 The Japan Society of Applied Physics.