The kinetics of lattice distortion introduction and lattice relaxation at the surface of thermally-oxidized 4H-SiC (0001)

摘要

The kinetics of lattice distortion introduction and lattice relaxation at the surface of thermally-oxidized 4H-SiC (0001) were investigated. Our results suggested that lattice distortion introduction and lattice relaxation seem to follow zeroth and second order rate laws, respectively. The obtained activation energy of similar to 3.9 eV for lattice distortion introduction and similar to 1 eV for its relaxation indicate that the lattice distortion is determined by a bond rearrangement or movement process with a relatively low activation energy. Furthermore, the formation of byproducts which remain at the surface region of 4H-SiC was predicted to be a possible origin of the significant lattice distortion. (C) 2019 The Japan Society of Applied Physics