Vanadium-doped molybdenum disulfide film-based strain sensors with high gauge factor

摘要

This paper reports the piezoresistive performance of the two-dimensional (2D) material of vanadium (V)-doped molybdenum disulfide (MoS2) films based on sulfurization of sputtered Mo thin films. I-V characteristics indicate that V atom doping indeed decreases the resistivity of MoS2. Strain sensors based on V-doped MoS2 resistive elements were fabricated. By using a four-point bending method, a gauge factor (GF) of 140 under compressive and tensile strain conditions was obtained. The piezoresistive effect of V-doped MoS2 with different V sputtering conditions was also investigated. The doping method introducing V atoms as dopants is found to play an important role in enhancing piezoresistive performance. (C) 2019 The Japan Society of Applied Physics