Ultrathin inserted AIGaN/InAIN heterojunction for performance improvement in AIGaN-based deep ultraviolet light-emitting diodes

摘要

We propose an innovative ultrathin AlGaN/InAlN heterojunction (HJ) inserted in AlGaN-based deep ultraviolet light-emitting diode (DUV LED) structure. Theoretical investigations indicate that the AlGaN/InAlN HJ is quite beneficial to suppress electron leakage and improve hole injection. These boosted characteristics strengthen the radiative recombination in the active region leading to remarkably improved optical power. Carrier transfer analysis reveals that the InAlN layer enhances the tunneling process for holes. The distinct AlGaN/InAlN HJ provides a promising alternative to be applied in DUV LED structures, as it not only functions as a sufficient electron blocker, but substantially facilitates the hole transport. (C) 2019 The Japan Society of Applied Physics