Growth of Semipolar (1122) GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate

摘要

Semipolar (1122) GaN was achieved by controlling anisotropic growth rates in a maskless r-plane patterned sapphire substrate. Upon optimizing the growth conditions, the growth rate of the GaN layer on etched c-plane-like sapphire was much higher than that on other planes such as the original r-plane sapphire. Singularly (1122)-oriented GaN was confirmed when GaN was grown on only the c-plane-like sapphire sidewall. The control of the anisotropic growth rate is useful for growing nonpolar and semipolar layers using maskless patterned substrates.