Selective Growth of Buried n~+ Diamond on (001) Phosphorus-Doped n-Type Diamond Film

摘要

Heavily phosphorus doping (n~+) is a promising technique to reduce the resistance of n-type diamond. We propose a selective (111) direction growth technique on (001) diamond films, which enables n~+ diamond to be fabricated even on the (001) orientation. The maximum concentration of about 10~(20) cm~(-3) was observed by secondary ion mass spectroscopy, although the distribution of phosphorus depth was not uniform. Electrical properties of selectively grown n~+ diamond were characterized by current-voltage experiments. Clear conduction was found along the line and space structure of n~+ diamond, and its resistivity was determined to be as low as ～3 × 10~2 Ω cm, which is four orders of magnitude lower than that of the conventional (001) n-type diamond film.