High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges

摘要

We have realized high-performance p- and n-type top-gate carbon nanotube field-effect transistors (CNFETs) by controlling the charges introduced at the interface between the gate insulator and the substrate. We also fabricated a complementary metal-oxide-semiconductor (CMOS) inverter on an individual single-walled carbon nanotube (SWNT). This CMOS inverter exhibited a high voltage gain of 26 and a large noise margin of ～70% of V_(dd)/2 The proposed technique provides air-stable and high-performance carbon nanotube CMOS devices that are compatible with the Si CMOS process. The effects of interface charges on the mechanisms of CNFET operation have also been investigated on the basis of potential calculations.