Fabrication of Four-Terminal Fin Field-Effect Transistors with Asymmetric Gate-Oxide Thickness Using an Anisotropic Oxidation Process with a Neutral Beam

摘要

Four-terminal (4T) fin-type double-gate metal-oxide-semiconductor field-effect transistors (FinFETs) having symmetric oxide thick (T_(ox)) (T_(ox1) = T_(ox2) = 2.5nm) and asymmetric (T_(ox1) = 2.5nm, T_（ox2） = 4nm) oxide thick (T_(ox)) gates that can flexibly control threshold voltage (ν_th) have been fabricated using a simple gate oxidation process of neutral-beam oxidation (NBO). Flexible Vth controllability was found in symmetric T_(ox) 4T FinFETs. Effective V_th controllability while keeping a low subthreshold slope was achieved with asymmetric T_(ox) 4T-FinFETs due to a slightly thicker V_(th) control gate oxide.