Improved Performance of lno.53Gao.47As-Based Metal-Oxide-Semiconductor Capacitors with AI:ZrO2 Gate Dielectric Grown by Atomic Layer Deposition

摘要

Atomic layer deposition of AI:ZrC>2 films on lno.53Gao.47As substrates is shown to be a promising route to boost the oxide permittivity with respect to AI2O3 gate dielectrics and concomitantly take benefit from the reducing effect of the trimethylaluminum precursor on the lno.53Gao.47As surface. We demonstrates that increasing the number of initial AI2O3 cycles in the growth sequence can improve the physical quality and the electrical response of the AI:Zr02/ln0.53Gao.47As interface while preserving the overall composition of the oxide.