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Microstructure and Magnetic Properties of bcc-Co Films Epitaxially Grown on GaAs(110)_(B3) Single-Crystal Substrates

机译:GaAs(110)_(B3)单晶衬底上外延生长的bcc-Co薄膜的微观结构和磁性

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Bcc-Co(110) single-crystal films were obtained on GaAs(110)_(B3) substrates by ultrahigh-vacuum rf magnetron sputtering. The detailed film structures are studied by refection high energy electron diffraction, X-ray diffraction, and transmission electron microscopy. The lattice constants of bcc-Co film are determined to be (a, b, c, c/a) = (0.2789 nm, 0.2789 nm, 0.2825 nm, 1.013). The in-plane lattice spacing is 2.6% larger than the out-of-plane lattice spacing due to accommodation of lattice mismatch. The magnetization properties of bcc-Co film reflect the magnetocrystalline anisotropy of bcc-Co crystal with the easy magnetization axes along bcc(100) directions.
机译:通过超高真空射频磁控溅射在GaAs(110)_(B3)衬底上获得了Bcc-Co(110)单晶膜。通过反射高能电子衍射,X射线衍射和透射电子显微镜研究了详细的膜结构。确定bcc-Co膜的晶格常数为(a,b,c,c / a)=(0.2789 nm,0.2789 nm,0.2825 nm,1.013)。由于晶格失配的适应,面内晶格间距比面外晶格间距大2.6%。 bcc-Co膜的磁化特性反映了bcc-Co晶体的磁晶各向异性,其易磁化轴沿bcc(100)方向。

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    《Annales de l'I.H.P》 |2011年第1期|p.013006.1-013006.3|共3页
  • 作者单位

    Faculty of Science and Engineering, Chuo University, Bunkyo, Tokyo 112-8551, Japan,Japan Society for the Promotion of Science, Chiyoda, Tokyo 102-8472, Japan;

    Faculty of Science and Engineering, Chuo University, Bunkyo, Tokyo 112-8551, Japan;

    Faculty of Science and Engineering, Chuo University, Bunkyo, Tokyo 112-8551, Japan;

    Faculty of Science and Engineering, Chuo University, Bunkyo, Tokyo 112-8551, Japan;

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