Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS

摘要

A Ge CMOS inverter and a ring oscillator composed of Si-passivated ultrathin-body (UTB, 10 nm) depletion-type poly-Ge p- and n-MISFETs with a single metal gate have been successfully fabricated and demonstrated for the first time. A low I_(off) coming from a depletion-type thin channel, a thermally stable gate stack interface against interlayer deposition for interconnection due to Si passivation, and a large V_(th), difference between p- and n-MISFETs originating from Si passivation enabled poly-Ge CMOS IC operations.