Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates

摘要

We experimentally demonstrate the efficacy of using slant field plates (field plates with the plate-to-channel gap gradually increasing away from the gate edge) on the breakdown voltage. We develop a new fabrication process using a multi-step SiCN film such that both slant and conventional field plates are fabricated simultaneously. Consequently, we fabricate 230-nm-gate AlGaN/GaN HEMTs with several types of field plates. The slant field plate increases the breakdown voltage by 66% more than that of the conventional field plate. The advantages of using slant field plates to increase the breakdown voltage are experimentally confirmed for the first time.