机译:带有渐变掺杂缓冲和倾斜背电极的高压RESURF AlGaN / GaN高电子迁移率晶体管的数值分析
Ningbo Univ Dept Microelect Sci & Engn Ningbo 315211 Zhejiang Peoples R China|Hebei Semicond Res Inst Natl Key Lab ASIC Shijiazhuang 050051 Hebei Peoples R China;
Hebei Semicond Res Inst Natl Key Lab ASIC Shijiazhuang 050051 Hebei Peoples R China;
Ningbo Univ Dept Microelect Sci & Engn Ningbo 315211 Zhejiang Peoples R China;
Xian Shiyou Univ Coll Sci Xian 710065 Shaanxi Peoples R China;
Ningbo Univ Dept Microelect Sci & Engn Ningbo 315211 Zhejiang Peoples R China|Hebei Semicond Res Inst Natl Key Lab ASIC Shijiazhuang 050051 Hebei Peoples R China|Nanjing Univ Natl Lab Solid State Microstruct Nanjing 210093 Jiangsu Peoples R China;
aluminium compounds; two-dimensional electron gas; III-V semiconductors; semiconductor device breakdown; wide band gap semiconductors; gallium compounds; space charge; high electron mobility transistors; semiconductor device models; semiconductor doping; graded doping buffer; GDB; AlGaN-GaN; voltage 1701; 0 V; voltage 2150; 0 V; frequency 13; 84 GHz; frequency 8; 24 GHz; frequency 14; 8 GHz; frequency 8; 76 GHz; 2DEG; high-voltage RESURF AlGaN-GaN high-electron-mobility transistor; reduced surface field AlGaN-GaN high-electron-mobility transistor; slant back electrode; p-dopant density; ON-state resistance; gate-drain spacing; back electrode RESURF HEMT; conventional BE-RESURF HEMT; peak electric field; electric field distribution; low p-dopant density; breakdown voltage; electric field lines; concentrated negative space charges; SBE;
机译:通过MOVPE在掺有Fe的GaN缓冲层的蓝宝石上的AlGaN / GaN高电子迁移率晶体管
机译:用Fe掺杂缓冲液中的AlGaN / GaN高电子迁移晶体管栅极断开状态应力诱导的捕获效应
机译:用Fe Delta-掺杂缓冲液的AlGaN / GaN高电子迁移晶体管的栅极泄漏和击穿特性
机译:Si上初始AlN成核层顶部的AlGaN缓冲层的Al含量与AlGaN / GaN高电子迁移率晶体管结构的垂直泄漏电流之间的关系
机译:在AlGaN / GaN高电子迁移率晶体管上进行等离子增强化学气相沉积的氮化硅钝化的热稳定性。
机译:AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
机译:使用沟槽结构的AlGaN / GaN高电子迁移率晶体管用于高压开关应用