机译:Bi_2Te_2Se微片的普遍电导涨落指示拓扑迁移
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China;
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China;
Department of Physics, Fudan University, Shanghai 200433, P. R. China;
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China;
Department of Physics, Fudan University, Shanghai 200433, P. R. China;
Department of Physics, Fudan University, Shanghai 200433, P. R. China;
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China;
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China;
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China;
机译:二维通用电导波动和表面态在Bi 2 sub> Te 2 sub> se microflakes中的表面状态的相互作用
机译:电子空穴电荷水坑的存在和3D拓扑绝缘子中强大通用电导波动的观察
机译:拓扑绝缘子中的普遍电导波动和对称性类交叉的直接观察
机译:金属纳米铁缘零偏置传输异常 - 磁场依赖性和通用电导波动 -
机译:拓扑半球和非叙述拓扑绝缘子的运输特性
机译:Bi2Te2Se薄片中的二维通用电导涨落和表面态的电子-声子相互作用
机译:通用电导的拓扑传输的指示 Bi2Te2se微米薄片的波动