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机译:通过将FeZr层插入具有垂直磁各向异性的多层堆叠中来形成bcc(001)织构化的CoFe层
Department of Nano Semiconductor Engineering, Korea University, Seoul 136-713, Korea;
Department of Nano Semiconductor Engineering, Korea University, Seoul 136-713, Korea;
Department of Nano Semiconductor Engineering, Korea University, Seoul 136-713, Korea,Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea;
Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea;
机译:缓冲层退火对垂直磁各向异性的(001)织构MnGa超薄膜生长的影响
机译:Ta / TaO
机译:Ta / TaO_x / Ta / CoFeB / MgO / W叠层通过TaO_x底层插入的热稳定垂直磁各向异性
机译:(07C703)具有垂直磁各向异性的CO / PT多层磁隧道结
机译:具有垂直磁各向异性的Co基薄膜和多层膜的结构和性能。
机译:MgO / CoFe /金属覆盖层结构中界面垂直磁各向异性的起源
机译:mgO势垒垂直磁隧道结与CoFe / pd 多层和铁磁插入层