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CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

机译:具有垂直各向异性的CoFe / Ni多层膜,用于微波辅助磁记录

摘要

A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.
机译:公开了具有种子/ SIL /间隔物/ FGL /封盖构造的自旋转移振荡器,其具有由Ta制成的复合种子层和具有fcc(111)或hcp(001)织构以增强垂直磁各向异性(PMA)的金属层。在上面的(A1 / A2) X 层压旋转注入层(SIL)中。场产生层(FGL)由高Bs的材料制成,例如FeCo。或者,STO具有种子/ FGL /垫片/ SIL /封盖配置。 SIL可以包括FeCo层,该层与(A1 / A2) X 层压板(x为5到50)进行交换以提高坚固性。 FGL可包括与高Bs层耦合的(A1 / A2) Y 层压板(y = 5至30),以实现更容易的振荡。 A1可以是Co,CoFe或CoFeR之一,其中R是金属,并且A2是Ni,NiCo或NiFe之一。 STO可以形成在写头中的主极和后屏蔽之间。

著录项

  • 公开/公告号US9349396B2

    专利类型

  • 公开/公告日2016-05-24

    原文格式PDF

  • 申请/专利权人 HEADWAY TECHNOLOGIES INC.;

    申请/专利号US201514626983

  • 发明设计人 KUNLIANG ZHANG;MIN LI;YUCHEN ZHOU;

    申请日2015-02-20

  • 分类号G11B5/235;G11B5/31;G11B5/39;G11B5/33;B82Y10;B82Y25;G01R33/09;G01R33/12;G11B5/127;H01F41/30;H01L43/08;H01L43/10;H01L43/12;B82Y40;H01F1/057;G11B5;H01F10/32;

  • 国家 US

  • 入库时间 2022-08-21 14:30:25

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