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Structure and properties of Co-based thin films and multilayers with perpendicular magnetic anisotropy.

机译:具有垂直磁各向异性的Co基薄膜和多层膜的结构和性能。

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摘要

The effects of growth temperature, TG, and ion-irradiation on the magnetic properties and microstructure of Co/Pt multilayers with perpendicular anisotropy were investigated. The columnar-grain size and the 111> texture were found to increase with an increase in TG. Up to a critical temperature, Tcrit, a monotonic increase in coercivity, HC, with TG was measured, followed by a decrease in coercivity above Tcrit. The magnetic domains of films grown below Tcrit were irregular and paisley-like and their sub-micron size decreased with increasing TG. Above Tcrit, sub-100 nm domains were found. A decrease in HC and domain size was measured when multilayers were exposed to ion-irradiation. The ion-induced changes in the magnetic properties are associated with a decrease in interfacial anisotropy, KS. Transmission electron microscopy, the ion-irradiation simulations and the calculations of interface anisotropy found the ion-induced changes of magnetic properties not to be caused by the large microstructural changes but to be associated with localized ion-beam induced atomic disordering at the Co/Pt interfaces. At high enough doses, KS becomes comparable to the shape anisotropy and a transition to in-plane magnetization results. The principles of ion-modification were applied to pattern the magnetic properties of the Co/Pt multilayers down to below 100 nm periodic arrays by irradiation through a stencil mask or direct focused ion beam writing. The magnetic domain confinement and changes in the magnetic reversal processes due to the ion-irradiation patterning were studied for two types of magnetic arrays: (a) in-plane magnetized dots surrounded by out-of plane matrix and (b) of out-of-plane bits surrounded by in-plane lines. Two complementary magnetic imaging techniques were utilized: Lorentz transmission electron microscopy sensitive to in-plane magnetization and magnetic transmission x-ray microscopy sensitive to perpendicular magnetization. The boundaries of the patterns, defined by the transition from out-of-plane to in-plane magnetization, were determined by the irradiation pattern. Softening of the in-plane regions (HC 300 Oe) as compared to the out-of-plane coercivity was found. The perpendicular reversals were found to always originate at the pattern boundaries at substantially reduced nucleation fields and to be influenced by the microstructure. Bit patterns larger than ∼100 nm islands were found to be multidomain and below 100 nm, single-domain bits were recorded.; C-axis oriented CoCr films were grown and the magnetic domain structure was investigated as a function of sample thickness and temperature. A transition thickness from large in-plane domains to up-down stripe domains was found to increase with temperature.
机译:研究了生长温度,T G 和离子辐照对垂直各向异性Co / Pt多层膜的磁性和微观结构的影响。发现柱状晶粒尺寸和<111>织构随T G 的增加而增加。在临界温度T crit 下,矫顽力 H C 随T G 单调增加测量,然后矫顽力降低到T crit 以上。在T crit 以下生长的薄膜的磁畴不规则且呈佩斯利状,并且随着T G 的增加,其亚微米尺寸减小。在T crit 之上,发现了低于100 nm的区域。当多层膜暴露于离子辐照下时, H C 和畴尺寸的减小。离子引起的磁性能变化与界面各向异性 K S 的降低有关。透射电子显微镜,离子辐照模拟和界面各向异性计算发现,离子诱导的磁性能变化不是由大的微观结构变化引起的,而是与Co / Pt处的局部离子束诱导的原子无序有关。接口。在足够高的剂量下, K S 可以与形状各向异性相媲美,并且可以转变为面内磁化强度。通过模版掩模辐照或直接聚焦离子束写入,应用了离子改性原理,可将Co / Pt多层膜的磁性能图案化至100 nm以下的周期性阵列。针对两种类型的磁阵列研究了由于离子辐照图案化而引起的磁畴限制和磁逆过程的变化:(a)被平面外矩阵包围的平面内磁化点和(b)平面外矩阵平面位被平面线包围。利用了两种互补的磁成像技术:对平面内磁化敏感的洛伦兹透射电子显微镜和对垂直磁化敏感的磁透射X射线显微镜。通过从平面外磁化到平面内磁化的转变定义的图案边界由照射图案确定。发现与面外矫顽力相比,面内区域( H C <300 Oe)软化。发现垂直反转总是始于基本上减小的成核场的图案边界,并且受微观结构的影响。大于〜100 nm岛的位模式被发现是多域的,而低于100 nm的位模式则被记录为单域的位。生长了C轴取向的CoCr膜,并研究了磁畴结构与样品厚度和温度的关系。发现从大的平面畴到上下条纹畴的过渡厚度随温度增加。

著录项

  • 作者

    Kusinski, Grzegorz Jan.;

  • 作者单位

    University of California, Berkeley.;

  • 授予单位 University of California, Berkeley.;
  • 学科 Engineering Materials Science.; Physics Electricity and Magnetism.; Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2002
  • 页码 236 p.
  • 总页数 236
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;电磁学、电动力学;
  • 关键词

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