引入纳米氧化层的CoFe／Pd双层膜结构中增强的垂直磁各向异性研究

摘要

制备了CoFe／Pd双层结构的界面处或CoFe层内部引入纳米氧化层后的系列薄膜．研究结果显示，引入纳米氧化层后，可以使薄膜的磁各向异性在退火后从面内转到垂直膜面方向．并且对于在CoFe层内部引入纳米氧化层的这类样品，其强烈的垂直磁性可以在相当宽的有效磁性层厚度范围内（1．2—2nm）维持．在保持垂直磁性的前提下，这种特殊的双层膜结构中CoFe磁性层厚度比常规CoFe／Pd多层膜中的CoFe层厚度至少多出1．4nm．本文的研究有助于制备出具有较高热稳定性的垂直磁性器件电极．%A series of CoFe/Pd bilayer thin films is fabricated by introducing a native oxide layer to the interface or to the inside of CoFe layer in this paper. The results indicate that the magnetic anisotropy of the film is transformed from in-plane to out-of-plane after annealing by introducing the native oxide layer. For the samples with the introduction of native oxide layer into CoFe layer, the strong perpendicular magnetic anisotropy is maintained in a wide range of the effective thickness （1.2-2 nm） of magnetic layer. For the perpendicular magnetic films, the thickness of CoFe layer in this special bilayer structure is at least 1.4 nm, thicker than in common CoFe/Pd multilayer structure. The results in this paper are beneficial for the fabrication of the electrodes in perpendicular magnetic devices with high thermal stability.