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首页> 外文期刊>Applied Physics Letters >Strain relaxation and enhanced perpendicular magnetic anisotropy in BiFeO_3:CoFe_2O_4 vertically aligned nanocomposite thin films
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Strain relaxation and enhanced perpendicular magnetic anisotropy in BiFeO_3:CoFe_2O_4 vertically aligned nanocomposite thin films

机译:BiFeO_3:CoFe_2O_4垂直取向纳米复合薄膜中的应变弛豫和增强的垂直磁各向异性

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摘要

Self-assembled BiFeO_3:CoFe_2O_4 (BFO:CFO) vertically aligned nanocomposite thin films have been fabricated on SrTiO_3 (001) substrates using pulsed laser deposition. The strain relaxation mechanism between BFO and CFO with a large lattice mismatch has been studied by X-ray diffraction and transmission electron microscopy. The as-prepared nanocomposite films exhibit enhanced perpendicular magnetic anisotropy as the BFO composition increases. Different anisotropy sources have been investigated, suggesting that spin-flop coupling between antiferromagnetic BFO and ferrimagnetic CFO plays a dominant role in enhancing the uniaxial magnetic anisotropy.
机译:自组装的BiFeO_3:CoFe_2O_4(BFO:CFO)垂直排列的纳米复合薄膜已使用脉冲激光沉积技术在SrTiO_3(001)基板上制备。通过X射线衍射和透射电子显微镜研究了具有大晶格失配的BFO和CFO之间的应变松弛机理。随着BFO组成的增加,所制备的纳米复合膜表现出增强的垂直磁各向异性。已经研究了不同的各向异性源,这表明反铁磁BFO和亚铁磁CFO之间的自旋耦合在增强单轴磁各向异性中起主要作用。

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  • 来源
    《Applied Physics Letters》 |2014年第6期|062402.1-062402.5|共5页
  • 作者单位

    Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, USA;

    Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, USA;

    Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, USA ,Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

    Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, USA;

    Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, USA;

    Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, USA;

    Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, USA;

    Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

    Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom;

    Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, USA ,Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, USA;

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