Improved performance of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cells

摘要

GaAs tunnel diodes (TDs) embedded with an InAs quantum dot (QD) layer were grown and their performance was compared with that of TDs without a QD layer. The TDs embedded with a QD layer showed enhanced peak tunnel current density and lower differential resistivity at zero bias compared with the TDs without a QD layer. The samples were then annealed to mimic the overlayer growth process. It was found that the performance degradation after annealing was smaller for the QD-layer-embedded TDs. The improved characteristics of the QD-layer-embedded GaAs TDs make them advantageous for interconnecting unit cells in tandem solar cells.