Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer

摘要

The use of high-growth-temperature GaAs spacer layers is demonstrated to significantly enhance the performance of multilayer InAs/GaAs quantum-dot solar cells. Threading dislocations are observed for a 30-layer quantum-dot structure with GaAs spacer layers grown at low temperature (510 ℃). The formation of threading dislocations is suppressed by growing the GaAs spacer layer at high temperature (580 ℃), leading to enhanced quantum-dot optical and structural characteristics. Incorporation of the high-growth-temperature GaAs spacer layers into a 30-layer InAs/GaAs quantum-dot solar cell results in a dramatic increase in the short-circuit current compared to the one without the high-growth-temperature spacer layers and an increase in the short-circuit current compared to the reference GaAs solar cell.