Low-power embedded read-only memory using atom switch and silicon-on-thin-buried-oxide transistor

摘要

We developed an atom-switch read-only memory (ROM) fabricated on silicon-on-thin-buried-oxide (SOTB) for use in a low-power microcontroller for the first time. An atom switch with a low programming voltage and large ON/OFF conductance ratio is suitable for low-power nonvolatile memory. The atom-switch ROM using an SOTB transistor uses a 0.34-1.2 V operating voltage and 12 μA/MHz active current (or 4.5 μW/MHz active power). Furthermore, the sleep current is as low as 0.4 μA when a body bias voltage is applied to the SOTB.