机译:磁对准制备高取向成分改性Pb(Zr,Ti)O_3陶瓷的工艺及增强压电性能
Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto 617-8555, Japan;
Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto 617-8555, Japan;
Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto 617-8555, Japan;
Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto 617-8555, Japan;
Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto 617-8555, Japan;
Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto 617-8555, Japan;
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan;
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan;
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan;
机译:溶胶-凝胶法制备高取向Pb(Mg_(1/3)Nb_(2/3))O_3 Pb(Zr,Ti)O_3薄膜的电性能
机译:ZnO改性Pb(Ni_(1/3)Nb_(2/3))O_3-Pb(Fe_(1/2)Nb_(1/2))O_3-Pb(Zr_(0.3)的组织,温度稳定性和电性能)Ti_(0.7))O_3压电陶瓷
机译:利用导电硝酸镧镍缓冲层在Pt / Ti / SiO_2 / Si衬底上生长的高取向Pb(Zr,Ti)O_3薄膜的铁电和压电特性
机译:Nd〜(3+)和Fe〜(3+)取代的Pb的结构和磁性增强的铁电性能(Zr_(0.45)Ti_(0.55))O_3陶瓷
机译:Zn-Ti-O三元和Zn-Ti-Zr-O四元纳米晶涂层的制备,结构及摩擦学性能关系。
机译:在高度c轴取向的Pb(Zr0.52Ti0.48)O3薄膜中具有超低应变滞后的大压电应变并且在非晶玻璃基板上呈柱状生长
机译:低温烧结PB(ZN1 / 2W1 / 2)O3-Pb(MN1 / 3NB2 / 3)O3-Pb(Zr,Ti)O3核苷酸的压电和介电性能