Ferroelectric and piezoelectric properties of highly oriented Pb(Zr,Ti)O_3 film grown on Pt/Ti/SiO_2/Si substrate using conductive lanthanum nickel nitrate buffer layer

摘要

The orientation and electrical properties of Pb(Zr,Ti)O_3 thin films deposited on a Pt/Ti/SiO_2/Si substrate using lanthanum nickel nitrate as a conductive buffer layer were analyzed. The lanthanum nickel nitrate buffer layer was not only electrically conductive but also effective in controlling the texture of the lead zirconate titanate (PZT) thin film. The role of the lanthanum nickel nitrate buffer layer and its effects on the orientation of the PZT thin film were analyzed by x-ray diffraction, electron beam back-scattered diffraction, and scanning electron microscopy. The annealed lanthanum nickel nitrate buffer layer was sufficiently conducting for use in longitudinal electrode configuration devices. The dielectric, ferroelectric, and piezoelectric properties of the highly (100) oriented PZT films grown with the lanthanum nickel nitrate buffer layer were measured and compared with those of (111) and (100) oriented PZT films deposited without a buffer layer.