Investigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronics

摘要

This paper demonstrates, for the first time, the potential of using flip-chip packaging to connect multiple AlGaN/GaN high-electron-mobility transistors (HEMTs) in parallel for application in power electronics. The electrical and thermal properties of both the bare and the packaged devices were experimentally investigated via pulsed current-voltage (Ⅰ-Ⅴ) measurements. Compared to the bare die, less than one-fifth the thermal resistance (R_(th)), triple the output current, and one-third the on-resistance (R_(on)) with temperature insensibility were observed when three transistors were connected in parallel through flip-chip packaging. Superior performance such as this makes flip-chip packaging a potential technology for high power GaN electronic applications.