Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm~2 grown by MIST EPITAXY~®

摘要

Thin-film corundum-structured gallium oxide (α-Ga_2O_3) Schottky barrier diodes (SBDs) were fabricated by growing α-Ga_2O_3 layers on sapphire substrates by the safe, low-cost, and energy-saving MIST EPITAXY~® technique, followed by lifting off the α-Ga_2O_3 layers from the substrates. The SBDs exhibited on-resistance and breakdown voltage of 0.1 mΩ·cm~2 and 531V (SBD1) or 0.4 mΩ·cm~2 and 855 V (SBD2), respectively. These results will encourage the future evolution of low-cost and high-performance SBDs with α-Ga_2O_3.