Development of Corundum-Structured Gallium Oxide Power Devices by MIST EPITAXY®

摘要

Corundum-structured Ga₂O₃ is a new candidate for next-generation power device materials due to its excellent physical properties. Thin film SBDs with extremely low specific on-resistance of 0.1 m Ωcm^{2 (breakdown voltage 531 V) were successfully fabricated using MIST EPITAXY® technology.}