Defect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition

摘要

An n -type α-Gasub2/subOsub3/sub layer was grown by mist chemical vapor deposition on a sapphire substrate, and a Ti/α-Gasub2/subOsub3/sub Schottky barrier diode was fabricated. Although the α-Gasub2/subOsub3/sub layer has a high threading dislocation density (larger than 10sup9/sup cmsup?2/sup), the ideality factor of 1.03 was obtained from the forward current–voltage characteristic in the range of 298 K–423 K, indicating the clear thermionic emission transport. The reverse current–voltage characteristic was also investigated, and the leakage current showed good agreement with the theoretical calculation based on the thermionic field emission model without any fitting parameter in the temperature range of 298 K–423 K.