Advanced SiGe Discrete Transistors Offer Design Flexibility

摘要

RF design engineers face many challenges in developing next generation products. These challenges include meeting increasingly difficult product specifications, product cost goals, product size limitations and shorter time to market demands. A move has been made recently towards higher levels of integration. However, in order to meet cost, cycle time and performance requirements, engineers still choose to design many of their own solutions using discrete components. To address this need in the marketplace, Stanford Micro devices has developed a family of Silicon Germanium (SiGe) discrete transistors. SiGe technology was chosen for its high performance and low cost. Transistor types in this product family range from small-signal devices for low-noise applications to a 1-watt device for power amplifier applications. A brief description of the SiGe process is given here, with its technical and cost advantages discussed first. Next, the process used for both types of SiGe transistors is reviewed. Finally, an overview of Stanford Microdevices' new discrete product line is presented and individual device performance is discussed. Some typical circuit applications are noted.