A novel design of local-feedback MOS transconductor using techniques for cancellation of mobility degradation and linearization of differential output current characteristic

摘要

In this article, a novel design of a local-feedback MOS transconductor using a technique of canceling mobility degradation and a linearization technique of differential output current characteristics is proposed. In the proposed techniques, adaptively biasing current sources are employed to improve linearity deterioration due to mobility degradation effect and to terminate differential output nodes for elimination of second-order nonlinear terms. The proposed transconductor has good linearity. Simulation results show that the proposed techniques are effective for improvement of linear characteristics.