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Buried bump and AC coupled interconnection technology

机译:埋凸点和交流耦合互连技术

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摘要

A novel physical structure, buried solder bumps, is introduced that solves the compliance problems that exist in scaling present area array technologies to ever-higher densities. In this technique, buried bumps provide dc connections between integrated circuits and substrates and ac coupled interconnections provide paths for ac signals across the same interface. This approach requires co-design of packaging and circuits and meets the growing demands for both interconnect density and bandwidth. AC coupled interconnection arrays can be built with pitches for ac signals below 100 μm and data rates of 6 Gb/s per I/O. This paper presents the physical and circuit aspects of this work as well as measured results from capacitively-coupled circuits fabricated in Taiwan semiconductor manufacturing Company (TSMC) 0.35-μm technology. Simulated results from capacitively-coupled circuits in TSMC 0.18 μm are also presented.
机译:引入了一种新颖的物理结构,即埋藏的焊料凸点,解决了将现有面积阵列技术扩展到更高密度时存在的合规性问题。在这种技术中,掩埋的凸块提供了集成电路和基板之间的直流连接,而交流耦合的互连则为跨同一接口的交流信号提供了路径。这种方法需要共同设计封装和电路,并满足对互连密度和带宽不断增长的需求。交流耦合互连阵列的间距可用于100μm以下的交流信号,每个I / O的数据速率为6 Gb / s。本文介绍了这项工作的物理和电路方面,以及采用台湾半导体制造公司(TSMC)0.35-μm技术制造的电容耦合电路的测量结果。还介绍了台积电0.18μm电容耦合电路的仿真结果。

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