Bottom-Imprint Method for VSS Growth of Epitaxial Silicon Nanowire Arrays with an Aluminium Catalyst

摘要

The interest in one-dimensional semiconductor materials has grown significantly over the last decade. Silicon nanowires (SiNWs) are of particular importance because of their potential compatibility with current silicon technology. One usual method to grow epitaxial semiconductor nanowires is the gold-catalyzed chemical vapor deposition (CVD) via the vapor-liquid-solid (VLS) mechanism.To realize Si-based high-density integrated devices, vertically standing epitaxial Si nanowire arrays on single-crystal substrates are the ideal platform.