Spray-Deposited Li-Doped ZnO Transistors with Electron Mobility Exceeding 50 cm~2/Vs

摘要

The ever increasing demand for high performance electronic devices that can be fabricated onto large-area substrates employing low manufacturing cost techniques has given a boost to the development of alternative types of semiconductor materials, such as organics and metal oxides, with desirable physical characteristics that are absent in their traditional inorganic counterparts. Metal oxide semiconductors, in particular, are very attractive for implementation into thin-film transistors (TFTs) mainly because of their high charge carrier mobility, high optical transparency, excellent chemical stability, mechanical stress tolerance and processing versatility.