Surface Modification of Indium-Tin-Oxide Via Self-Assembly of a Donor-Acceptor Complex: A Density Functional Theory Study

摘要

In organic semiconductor devices, the concept of controlled doping has been widely applied to reduce the charge-injection barrier at organic/electrode interfaces as well as to improve the electrical conductivity of organic hole/electron-transport layers (HTL/ETL).Ultraviolet photoelectron spectroscopy (UPS) experiments demonstrate that doping can induce significant energy-level shifts of the doped organic layer with respect to the Fermi level of the electrode, while the electrical conductivity of organic molecular semiconductor films has been shown to increase by several orders of magnitude via doping Recently, the controlled doping of a self-assembled monolayer of phos-phonic acid (PA) molecules used as surface modifiers on indium-tin oxide (ITO) has been proposed in order to enhance hole injection in organic light-emitting diodes (LEDs).