UV-Visible Spectroscopic Analysis of Electrical Properties in Alkali Metal-Doped Amorphous Zinc Tin Oxide Thin-Film Transistors

摘要

Recently, thin film transistors (TFTs) including various metal oxide semiconductors, such as In, Ga and Zn oxide, have attracted great interest for the switching devices for the next generation display such as smart window, transparent electronic wall, mobile display and smart sign. In comparison with Si semiconductor, which is widely used in the display industry, metal oxide semiconductors show high electrical performance as well as unique properties such as transparence induced by the wide bandgap. Generally, in the application to TFTs, metal oxide semiconductors are deposited as a film on substrates by various vacuum techniques, such as pulsed laser deposition (PLD), radio frequency (RF) sputtering, and atomic layer deposition (ALD), all of which have ensured outstanding electrical performance. Also, metal oxide semiconductors have good potential for use in printed electronics through various solution precursors. Recently, some remarkable results have been reported on the use of various solution precursors in ambient conditions for the fabrication of semiconductor in TFTs.