首页> 外文期刊>Advanced Materials >Fabrication and Doping Methods for Silicon Nano- and Micropillar Arrays for Solar-Cell Applications: A Review
【24h】

Fabrication and Doping Methods for Silicon Nano- and Micropillar Arrays for Solar-Cell Applications: A Review

机译:太阳能电池用硅纳米和微柱阵列的制造和掺杂方法:综述

获取原文
获取原文并翻译 | 示例
           

摘要

Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p junctions. High densities of such structures greatly enhance the light-absorbing properties of the device, whereas the 3D p junction geometry shortens the diffusion length of minority carriers and diminishes recombination. Due to the vast silicon nano- and microfabrication toolbox that exists nowadays, many versatile methods for the preparation of such highly structured samples are available. Furthermore, the formation of p junctions on structured surfaces is possible by a variety of doping techniques, in large part transferred from microelectronic circuit technology. The right choice of doping method, to achieve good control of junction depth and doping level, can contribute to an improvement of the overall efficiency that can be obtained in devices for energy applications. A review of the state-of-the-art of the fabrication and doping of silicon micro and nanopillars is presented here, as well as of the analysis of the properties and geometry of thus-formed 3D-structured p junctions.
机译:硅是商业太阳能电池的主要成分之一,并用于许多其他太阳能收集设备。这些设备的整体效率可以通过使用结构化表面来提高,这些结构化表面包含具有径向p / n结的纳米级至微米级柱体。这种结构的高密度极大地增强了器件的光吸收性能,而3D p / n结几何形状则缩短了少数载流子的扩散长度,并减少了重组。由于当今存在着巨大的硅纳米制造和微制造工具箱,因此可以使用许多通用的方法来制备这种高度结构化的样品。此外,可以通过各种掺杂技术在结构化表面上形成p / n结,其中大部分是从微电子电路技术转移而来的。正确选择掺杂方法,以实现对结深度和掺杂水平的良好控制,可以有助于提高在能源应用设备中可获得的整体效率。本文介绍了硅微柱和纳米柱的制造和掺杂的最新技术,以及对由此形成的3D结构的p / n结的性质和几何形状的分析。

著录项

  • 来源
    《Advanced Materials》 |2015年第43期|6781-6796|共16页
  • 作者单位

    Univ Twente, MESA Inst Nanotechnol, Mol Nanofabricat, NL-7500 AE Enschede, Netherlands|Univ Twente, MESA Inst Nanotechnol, Mesoscale Chem Syst, NL-7500 AE Enschede, Netherlands;

    Univ Twente, MESA Inst Nanotechnol, Mol Nanofabricat, NL-7500 AE Enschede, Netherlands;

    Univ Twente, MESA Inst Nanotechnol, Mesoscale Chem Syst, NL-7500 AE Enschede, Netherlands;

    Univ Twente, MESA Inst Nanotechnol, Mesoscale Chem Syst, NL-7500 AE Enschede, Netherlands|Univ Twente, MESA Inst Nanotechnol, Mesoscale Chem Syst, NL-7500 AE Enschede, Netherlands;

    Univ Twente, MESA Inst Nanotechnol, Mol Nanofabricat, NL-7500 AE Enschede, Netherlands;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号