首页>
外国专利>
High fill factor image array having a continuous amorphous silicon sensor layer and a doped poly-silicon back contact and fabrication method
High fill factor image array having a continuous amorphous silicon sensor layer and a doped poly-silicon back contact and fabrication method
展开▼
机译:具有连续的非晶硅传感器层和掺杂的多晶硅背接触的高填充因子图像阵列及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts (46) and intrinsic amorphous silicon layers (50). One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon (48) to serve as a buffer between the metal back contact (46) and the intrinsic amorphous silicon layer (50). Another method of eliminating the Schottky junction completely replaces the metal back contact (46) and the N doped amorphous silicon layer (48) with a substitute material such as N doped poly-silicon (504, Figure 5). IMAGE
展开▼