Fabrication of SnS quantum dots for solar-cell applications: Issues of capping and doping

摘要

We present our recent study of SnS particles in the backdrop of significant developments that have taken place so far for which a review of the present status of this material, its structural, optical, electronic characteristics, and device performance is described. To further improve the performance of low-cost chalcogenide-based solar cells, we propose to employ a thirdgeneration solar cells fabrication scheme, where an intermediate bandgap layer can be incorporated in a CIS solar cell to increase its current generation and efficiency. For this purpose SnS quantum dots (QD) embedded indium sulfide (In_2S_3) layer is developed. We address how to cap the QD surface for defect passivation and protection from ambient and the doping nature of the particles.