Selective Angle Electroluminescence of Light-Emitting Diodes based on Nanostructured ZnO/GaN Heterojunctions

摘要

Selective angle electroluminescence of violet light with a peak wavelength of 405 nm from light-emitting diodes based on nanostructured p-GaN/ZnO heterojunctions is reported. The fabrication of well-aligned nanobottles with excellent crystalline quality is achieved by chemical vapor deposition at temperatures as low as 450 ℃ with a specially designed upside-down arrangement of substrate configuration. Selective angle light sources are essential in our daily life. With the geometry of the nanobottle waveguides, it is very easy to realize such a practical application. Therefore, the discovery reported here should be very useful for the future development of many unique optoelectronic devices.