机译:拓扑结晶绝缘子的防铠缺陷增强的热电性能
Univ Sci & Technol China Int Ctr Quantum Design Funct Mat ICQD Hefei Natl Lab Phys Sci Microscale HFNL Hefei 230026 Anhui Peoples R China|Univ Sci & Technol China CAS Ctr Excellence Quantum Informat & Quantum Phy Hefei 230026 Anhui Peoples R China|Southern Univ Sci & Technol Dept Phys Shenzhen Key Lab Thermoelect Mat Shenzhen 518055 Peoples R China;
Univ Sci & Technol China Int Ctr Quantum Design Funct Mat ICQD Hefei Natl Lab Phys Sci Microscale HFNL Hefei 230026 Anhui Peoples R China|Univ Sci & Technol China CAS Ctr Excellence Quantum Informat & Quantum Phy Hefei 230026 Anhui Peoples R China;
Univ Sci & Technol China Int Ctr Quantum Design Funct Mat ICQD Hefei Natl Lab Phys Sci Microscale HFNL Hefei 230026 Anhui Peoples R China|Univ Sci & Technol China CAS Ctr Excellence Quantum Informat & Quantum Phy Hefei 230026 Anhui Peoples R China|Univ Sci & Technol China Sch Phys Sci Chinese Acad Sci Key Lab Strongly Coupled Quantum Matter Phys Hefei 230026 Anhui Peoples R China;
Southern Univ Sci & Technol Dept Phys Shenzhen Key Lab Thermoelect Mat Shenzhen 518055 Peoples R China;
Univ Sci & Technol China Int Ctr Quantum Design Funct Mat ICQD Hefei Natl Lab Phys Sci Microscale HFNL Hefei 230026 Anhui Peoples R China|Univ Sci & Technol China CAS Ctr Excellence Quantum Informat & Quantum Phy Hefei 230026 Anhui Peoples R China;
band engineering; DFT calculations; intrinsic defects; thermoelectric performance; topological crystalline insulator;
机译:通过同时调谐带隙和化学潜力,通过同时调谐拓扑结晶绝缘体N型PB0.6SN0.4Te中的热电性能
机译:通过PB0.5SN0.5SN0.5TE1-XSEx的拓扑结晶绝缘子和带收敛的拓扑结晶绝缘子和带收敛的热电性能提高热电性能
机译:通过拓扑状态和氯掺杂的拓扑状态和化学潜力调整的晶体扰动,增强拓扑晶体绝缘体Pb0.7sn0.3的热电性能
机译:Bi_2Te_3拓扑绝缘膜的伪图,具有增强的热电性能
机译:拓扑绝缘子-硒化铋的电输运和石墨烯的热电性能
机译:单晶拓扑绝缘体Bi的热电特性
机译:拓扑绝缘子,拓扑结晶绝缘子,拓扑结构 semimetals和拓扑Kondo绝缘体