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Pseudo-Superlattices of Bi_2Te_3 Topological Insulator Films with Enhanced Thermoelectric Performance

机译:Bi_2Te_3拓扑绝缘膜的伪图,具有增强的热电性能

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It was recently suggested theoretically that atomically thin films of Bi_2Te_3 topological insulators have strongly enhanced thermoelectric figure of merit. We used the "graphene-like" exfoliation process to obtain Bi_2Te_3 thin films. The films were stacked and subjected to thermal treatment to fabricate pseudo-superlattices of single crystal Bi_2Te_3 films. Thermal conductivity of these structures was measured by the "hot disk" and "laser flash" techniques. The room temperature in-plane and cross-plane thermal conductivity of the stacks decreased by a factor of~2.4 and 3.5 respectively as compared to that of bulk. The strong decrease of thermal conductivity with preserved electrical properties translates to ~140-250% increase in the thermoelectric figure if merit. It is expected that the film thinning to few-quintuples, and tuning of the Fermi level can lead to the topological insulator surface transport regime with the theoretically predicted extraordinary thermoelectric efficiency.
机译:最近在理论上建议地提出了Bi_2Te_3拓扑绝缘体的原子薄膜具有强大增强的热电值的优点。我们使用“石墨烯”剥离过程来获得Bi_2te_3薄膜。将薄膜堆叠并进行热处理,以制造单晶Bi_2Te_3膜的伪图。通过“热盘”和“激光闪光”技术测量这些结构的导热率。与散装相比,堆叠的室温和堆叠的平面导热率分别减少了〜2.4和3.5。具有保存的电性能的热导率的强度降低转化为热电图中的〜140-250%,如果优点。预计将薄膜稀疏到几翅膀,并调整费米水平可以导致拓扑绝缘体表面传输方案,理论上预测了非凡的热电效率。

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