An accurate method for extracting the critical field in short channel nmos devices

摘要

In this letter, an accurate method for extracting the critical field Ec in short channel MOSFET's is presented. The principle of this method is based on the comparison Between two models which given drain saturation voltage evolution against gate Voltage Vd_sat(Vg) continuously. The results obtained by this technique have shown Better agreement with measurements data and have allow in the same time to Determine the validity domain of Sodini's law [1].