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机译:GaN / AlGaN单量子盘纳米棒的结构和光学表征
Physics Department, Assiut University, Assiut 71516, Egypt,The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki Osaka 567-0047, Japan;
The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki Osaka 567-0047, Japan;
The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki Osaka 567-0047, Japan;
The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki Osaka 567-0047, Japan;
The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki Osaka 567-0047, Japan;
机译:具有GaN / AlGaN多层量子盘的单个GaN纳米棒的光致发光特性
机译:应力对包含单个InGaN / GaN量子盘的GaN纳米棒中光学跃迁的影响
机译:应力对包含单个InGaN / GaN量子盘的GaN纳米棒中光学跃迁的影响
机译:GaN / AlGaN和InGaN / GaN多量子阱微盘腔中的光学特性和共振模式
机译:InGaN / GaN多量子阱结构:亚微米结构,光学,电和化学性质。
机译:嵌入GaN纳米棒中的InGaN量子盘的线性偏振光致发光
机译:具有GaN / AlGaN多层量子盘的单个GaN纳米棒的光致发光特性