机译:应力对包含单个InGaN / GaN量子盘的GaN纳米棒中光学跃迁的影响
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom;
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom;
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom;
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom;
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom;
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom;
机译:应力对包含单个InGaN / GaN量子盘的GaN纳米棒中光学跃迁的影响
机译:在GaN纳米棒顶部生长的InGaN / GaN多量子盘的量子限制斯塔克效应
机译:InGaN / GaN多量子盘在外部应力作用下的对称可调光学性能
机译:GaN / AlGaN和InGaN / GaN多量子阱微盘腔中的光学特性和共振模式
机译:GaN纳米线中InGaN盘的相干非线性光学光谱。
机译:嵌入GaN纳米棒中的InGaN量子盘的线性偏振光致发光
机译:应力对包含单个InGaN / GaN量子盘的GaN纳米棒中光学跃迁的影响