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Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

机译:应力对包含单个InGaN / GaN量子盘的GaN纳米棒中光学跃迁的影响

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摘要

Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280 nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.
机译:对包含单个InGaN量子盘(SQD)的GaN纳米棒进行了阴极发光(CL)高光谱成像,激发条件的变化受控。已经考虑了两种不同的纳米棒直径(200和280 nm)。随着电子束的加速电压及其入射位置的变化,观察到了来自SQD的CL光谱的系统变化。结果表明,SQD中的主要光学跃迁是跨纳米棒变化的,这是由于变形势和量子态Stark效应对跃迁能量的贡献之间的相互影响的结果,这是伪形变的径向变化的结果。

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  • 来源
    《Journal of Applied Physics》 |2014年第17期|174305.1-174305.7|共7页
  • 作者单位

    Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom;

    Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom;

    Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom;

    Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom;

    Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom;

    Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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