Study of si(111) implanted with As ions by X-ray diffraction ad grazing incidence methods

摘要

The Si(111) wafer cut from a bulk single crystal obtained by the Czochral- ski method was implanted with 5 x 10~16 I cm~2 of As ions of energy 80 keV. The dose applied was chosen above the amorphization limit of the silicon Substrate. Two samples, implanted and a reference, were studied by graz- Ing incidence X-ray reflectometry and X-ray diffraction methods using a high Resolution Philips MRD system equipped with a Cu source and a channel-cut Monochromator. The obtained spectra were compared with distributions Of ion range and defect production calculated with TRIM program [1], as Well as with theoretical models of reflectivity [2,3].