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Close contacts involving germanium and tin in crystal structures: experimental evidence of tetrel bonds

机译:晶体结构中涉及锗和锡的紧密接触:锡铁键的实验证据

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摘要

Modeling indicates the presence of a region of low electronic density (a “σ-hole”) on group 14 elements, and this offers an explanation for the ability of these elements to act as electrophilic sites and to form attractive interactions with nucleophiles. While many papers have described theoretical investigations of interactions involving carbon and silicon, such investigations of the heavier group 14 elements are relatively scarce. The purpose of this review is to rectify, to some extent, the current lack of experimental data on interactions formed by germanium and tin with nucleophiles. A survey of crystal structures in the Cambridge Structural Database is reported. This survey reveals that close contacts between Ge or Sn and lone-pair-possessing atoms are quite common, they can be either intra- or intermolecular contacts, and they are usually oriented along the extension of the covalent bond formed by the tetrel with the most electron-withdrawing substituent. Several examples are discussed in which germanium and tin atoms bear four carbon residues or in which halogen, oxygen, sulfur, or nitrogen substituents replace one, two, or three of those carbon residues. These close contacts are assumed to be the result of attractive interactions between the involved atoms and afford experimental evidence of the ability of germanium and tin to act as electrophilic sites, namely tetrel bond (TB) donors. This ability can govern the conformations and the packing of organic derivatives in the solid state. TBs can therefore be considered a promising and robust tool for crystal engineering. >Graphical abstractIntra- and intermolecular tetrel bonds involving organogermanium and -tin derivatives in crystalline solids
机译:建模表明第14组元素上存在低电子密度区域(“σ孔”),这为这些元素充当亲电位点并与亲核试剂形成有吸引力的相互作用的能力提供了解释。尽管许多论文描述了涉及碳和硅的相互作用的理论研究,但对较重的14族元素的研究相对较少。本文的目的是在某种程度上纠正目前缺乏有关锗和锡与亲核试剂形成相互作用的实验数据。据报道,在剑桥结构数据库中对晶体结构进行了调查。这项调查表明,Ge或Sn与具有孤对的原子之间的紧密接触是很常见的,它们可以是分子内或分子间接触,并且通常沿由锡et形成的共价键延伸而形成,吸电子取代基。讨论了几个例子,其中锗和锡原子带有四个碳残基,或者卤素,氧,硫或氮取代基取代了那些碳残基中的一个,两个或三个。这些紧密的接触被认为是所涉及的原子之间有吸引力的相互作用的结果,并提供了锗和锡充当亲电位点(即锡铁键(TB)供体)的能力的实验证据。这种能力可以控制固态有机衍生物的构象和堆积。因此,TB被认为是晶体工程的有前途且强大的工具。 <!-fig ft0-> <!-fig @ position =“ anchor” mode =文章f4-> <!-fig mode =“ anchred” f5-> >图形摘要<!-无花果/图形|无花果/替代品/图形模式=“ anchored” m1-> <!-标题a7->结晶固体中涉及有机锗和-锡衍生物的分子内和分子间的锡特尔键

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