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Fully-Differential TPoS Resonators Based on Dual Interdigital Electrodes for Feedthrough Suppression

机译:基于双叉指电极的全差分TPoS谐振器用于抑制馈通

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摘要

As one of the core components of MEMS (i.e., micro-electro-mechanical systems), thin-film piezoelectric-on-silicon (TPoS) resonators experienced a blooming development in the past decades due to unique features such as a remarkable capability of integration for attractive applications of system-on-chip integrated timing references. However, the parasitic capacitive feedthrough poses a great challenge to electrical detection of resonance in a microscale silicon-based mechanical resonator. Herein, a fully-differential configuration of a TPoS MEMS resonator based on a novel structural design of dual interdigital electrodes is proposed to eliminate the negative effect of feedthrough. The fundamental principle of feedthrough suppression was comprehensively investigated by using FEA (i.e., finite-element analysis) modeling and electrical measurements of fabricated devices. It was shown that with the help of fully-differential configuration, the key parameter of SBR (i.e., signal-to-background ratio) was significantly enhanced by greatly suppressing the in-phase signal. The -parameter measurement results further verified the effectiveness of this novel feedthrough suppression strategy, and the insertion loss and SBR of proposed TPoS resonators were improved to 4.27 dB and 42.47 dB, respectively.
机译:作为MEMS(即微机电系统)的核心组件之一,薄膜压电硅(TPoS)谐振器由于其独特的功能(例如卓越的集成能力)在过去的几十年中发展迅速。适用于片上系统集成时序参考的吸引人的应用。然而,寄生电容馈通对电学检测基于微型硅的机械谐振器中的谐振提出了巨大挑战。在此,提出了一种基于双叉指电极新颖结构设计的TPoS MEMS谐振器的全差分配置,以消除馈通的负面影响。通过使用有限元分析(即有限元分析)建模和制造设备的电气测量,全面研究了抑制馈通的基本原理。结果表明,借助全差分配置,通过大大抑制同相信号,SBR的关键参数(即信噪比)得到了显着提高。参数测量结果进一步验证了这种新颖的馈通抑制策略的有效性,所提出的TPoS谐振器的插入损耗和SBR分别提高到4.27 dB和42.47 dB。

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