In Situ Doping of Nitrogen in 110-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

摘要

Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl ) and methane (CH ) as precursors, along with nitrogen (N ) as a dopant. We investigated the effect of the volume fraction of nitrogen ( ) on the preferred orientation, microstructure, electrical conductivity ( ), deposition rate ( ), and optical transmittance. The preference of 3C-SiC for the <110> orientation increased with increasing . The value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing , reaching a maximum value of 7.4 × 10 S/m at = 20%. showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing , reaching 1437 μm/h at = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared <111>-oriented N-doped 3C-SiC, the high-speed preparation of <110>-oriented N-doped 3C-SiC bulks further broadens its application field.