DUAL ZONE THERMAL CHEMICAL VAPOR DEPOSITION APPARATUS FOR THE DEPOSITION OF MATERIAL AND IN SITU DOPING

摘要

in accordance with the present invention, the material composition and the doping carried out continuously for a two-region to heat chemical vapor deposition apparatus the desired material layer on a substrate with a first reaction for synthesizing; To the second reaction for performing the doping process; A gate valve to open or close from each other as in the reaction of the first and the second connecting portion connecting the reaction, and as in the first reaction and the second reaction; Reaction gas supply unit for supplying a reaction gas to at least one of a first reaction and a second reaction; And doping gas supply unit for supplying the doping gas to the second reaction; First temperature control unit for controlling the temperature in a first heating means and the first to raise the temperature in the reaction in the first reaction; And includes a first temperature control unit for controlling the temperature in the temperature in the first reaction in a first heating means and the first reaction to raise the gate valve is in the synthesis of the material in the first reaction, and in said first reaction case of moving between the first reaction in the sikimyeo close to each other in the second reaction in the substrate during the doping with the second reaction in the second reaction, and in the first reaction and the other is opened to the second reaction.