Investigation of direct inkjet-printed versus spin-coated ZrO2 for sputter IGZO thin film transistor

摘要

In this work, a low leakage current ZrO2 was fabricated for sputter indium gallium zinc oxide (IGZO) thin-film transistor using direct inkjet-printing technology. Spin-coated and direct inkjet-printed ZrO2 were prepared to investigate the film formation process and electrical performance for different process. Homogeneous ZrO2 films were observed through the high-resolution TEM images. The chemical structure of ZrO2 films were investigated by XPS measurements. The inkjet-printed ZrO2 layer upon IGZO showed a superior performance on mobility and off state current, but a large Vth shift under positive bias stress. As a result, the TFT device based on inkjet-printed ZrO2 exhibited a saturation mobility of 12.4 cm²/Vs, an Ion/Ioff ratio of 10⁶, a turn on voltage of 0 V and a 1.4-V Vth shift after 1-h PBS strain. Higher density films with less oxygen vacancy were responsible for low off state current for the printed ZrO2 device. The mechanism of deteriorated performance on PBS test can be ascribed to the In-rich region formed at the back channel which easily absorbs H2O and oxygen. The absorbed H2O and oxygen capture electrons under positive bias stress, serving as acceptors in TFT device. This work demonstrates the film formation process of direct inkjet-printed and spin-coated oxide films and reveals the potential of direct inkjet-printed oxide dielectric in high-performance oxide TFT device.Electronic supplementary materialThe online version of this article (10.1186/s11671-019-2905-2) contains supplementary material, which is available to authorized users.